WebThe IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. … WebDescriptions of Infineon IRFB4020PBF provided by its distributors. MOSFET; N Ch.; Digital Audio; 200V; 18A; 100 MOHM; 18 NC QG; TO-220AB; Pb-Free RS (Formerly Allied …
IRFB4020PBF - Infineon - Power MOSFET, N Channel, 200 V
WebIRFB4020PBF Datasheet Technical Specifications Infineon IRFB4020PBF technical specifications, attributes, and parameters. MOSFET; N Ch.; Digital Audio; 200V; 18A; 100 … WebIRFB4020 Datasheet, PDF - Alldatasheet Distributor Manufacturer IRFB4020 Datasheet, PDF Search Partnumber : Match&Start with "IRFB4020" - Total : 4 ( 1/1 Page) 1 2 3 5 IRFB4020 Distributor IRFB4 020 Manufacturer Search Partnumber : Match&Start with "IRFB4 020 " Total : 1 ( 1/1 Page) the others plugged in
IRFB7440PbF Product Datasheet - Infineon
Web2 www.irf.com CRepetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 1.0mH RG = 25Ω, IAS = 15A, VGS =10V. Part not … WebIRFB4020PBF Newark Part No.: 61M6831 Technical Datasheet: IRFB4020PBF Datasheet See all Technical Docs Product Information Transistor Polarity: N Channel Channel Type: N Channel Continuous Drain Current Id: 18A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.1ohm On Resistance Rds (on): 0.1ohm Rds (on) Test Voltage: 10V WebThe IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. the others recensione