Irhnm9a7120
WebThe IRHNMC9A7120 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source … WebSi7148DP. The Si7148DP from Vishay is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 9.1 to 14.5 Milliohm, Drain Source Breakdown Voltage 75 V, Gate …
Irhnm9a7120
Did you know?
WebInfineon Technologies - JEDEC Recognizes Infineon's QDPAK and DDPAK Packages for High Power Applications - Feb 10, 2024; STMicroelectronics - STMicroelectronics Introduces Automotive High Side Drivers - Feb 10, 2024; EPC Space - EPC Space Unveils 300 V eGan Power Transistor for Hi-Rel Commercial Satellite Space Applications - Feb 10, 2024; … IRHNM9A7120 Overview Parametrics Documents Order Packaging Support Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2 package - SMD-0.2, 100 krad (Si) TID, COTS Features Single event effect (SEE) hardened Low RDS (on) Low total gate charge Simple drive requirements Fast switching Hermetically sealed Ceramic package Light weight
WebIR veröffentlicht den IRHNM9A7120. Dieser ist der R9, 100V MOSFET in einem SMD 0,2 Gehäuse. Dies ist das neueste Produktrelease des R9 RadHard MOSFETs. Das Bauteil ist auf 23A mit einer RDSon von nur 55mOhms spezifiziert und in 100k sowie 300kRad Versionen verfügbar. Die Teilenummer für die Keramikdeckel Version lautet: IRHNMC9A7120. WebQuality Conformance Testing: Unlike standard commercial products, HiRel products must be submitted to various levels of quality conformance testing to ensure that the products are
WebIRF7389 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package. RoHS Compliant Low RDS(on) Dynamic dv/dt Rating Fast Switching Dual N and P-Channel MOSFET . Package : SO-8 ; Tj max : 150#x00b0;C ; Moisture Sensitivity Level : 1 ; Polarity : N+P ; RthJA max : 50K/W ; VDS max : 30V ; VGS max : 20V ; Type WebThe IRHNMC9A7120 from Infineon Technologies is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage 100 V, Gate …
Webtemplate irhnm9a7120 d g s #***** # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE ...
WebIRHF9130 -100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package. proven reliability in space applications. Packaged on a MIL-PRF-19500 manufacturing line. Base Part Status : Active ; IOUT Dual (A) : +/-1.67 ; Input Voltage Max (V) : 50 ; Input Voltage Min (V) : 18 ; Output Voltage Dual portland texas area codeWebMFR DS PD-97895RH Power MOSFET Surface Mount (SMD-0.2), 100V, N-Channel, IRHNM9A7120 General data Issue / Review: Status: Active Date: 12/04/2024 0:00:00 … portland texas billWebThe radiation hardened ISL74422BRH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a 5V CMOS logic input signal into a high current output at voltages up to 18V. Its fast rise/fall times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. portland texas bidsWebHermetic MOSFET - Serie HiRel: configurazioni singola, doppia, quad e voltage da 20V fino a 600V. optimus topfWebIR, with it's proprietary RAD-Hard MOSFET processes has been meeting this challenge for over 25 years. With the introduction of the first RAD-Hard MOSFET in 1985 to its latest generation of devices, IR has continually exceeded engineers expectations. Explore Our Ground-breaking Technologies Dual Rad-Hard MOSFETs optimus terra xpress he cooksetWebSCT3040KW7 - MOSFET from ROHM Semiconductor. Get product specifications, Download the Datasheet, Request a Quote and get pricing for SCT3040KW7 on everything PE portland texas book saleWebDrag and drop parameters to add, remove, and reorder. Circuit; Die Size; DLA Qualified; Forward Voltage Max; ID @ 100C (A) ID @ 100C N-Channel (A) ID @ 100C P-Channel (A) ID @ 25C optimus technologies pittsburgh pa